French-German Research Institute of Saint-Louis (ISL), 5 rue du General Cassagnou, BP 70034, 68301 Saint Louis Cedex, France;
French-German Research Institute of Saint-Louis (ISL), 5 rue du General Cassagnou, BP 70034, 68301 Saint Louis Cedex, France;
Max-Born-Institute for Nonlinear Optics and Ultrafast Spectroscopy, 2A Max-Born-Str., D-12489 Berlin, Germany;
Max-Born-Institute for Nonlinear Optics and Ultrafast Spectroscopy, 2A Max-Born-Str., D-12489 Berlin, Germany;
French-German Research Institute of Saint-Louis (ISL), 5 rue du General Cassagnou, BP 70034, 68301 Saint Louis Cedex, France;
French-German Research Institute of Saint-Louis (ISL), 5 rue du General Cassagnou, BP 70034, 68301 Saint Louis Cedex, France;
BAE Systems, Inc., MER15-1813, P.O. Box 868, Nashua, NH 03061-0868, USA;
Max-Born-Institute for Nonlinear Optics and Ultrafast Spectroscopy, 2A Max-Born-Str., D-12489 Berlin, Germany;
laser damage; CdSiP_2; ZnGeP_2; chalcopyrite crystals; mid-infrared;
机译:用1064和2090 nm的纳秒脉冲研究非线性晶体CdSiP_2和ZnGeP_2的激光损伤
机译:纳秒脉冲激发的1064 nm Si纳米晶体的光学非线性
机译:皮秒和纳秒脉冲在1064 nm处对二氧化硅的整体和表面激光损伤
机译:通过耦合355 nm和1064 nm纳秒脉冲识别KDP中激光诱导的损伤机制
机译:用1300nm和1064nm激光源的硅集成电路电光频率调制=用1300nm和1064nm激光的基于硅基集成电路的电光频调制(EOFM)
机译:基于不同波长效应的纳秒脉冲激光辐照多晶硅损伤特性的研究
机译:基于纳秒脉冲激光不同波长效应的多晶硅损伤特性研究
机译:对于KDp(磷酸二氢钾)晶体中的体积损伤,350-Nm和1064-Nm阈值的激光脉冲持续时间的变化。