Complementary Resistive Switches (CRS): High speed performance for the application in passive nanocrossbar arrays

摘要

In this report, the fabrication and electrical characterization of fully vertically integrated complementary resistive switches (CRS), which consist of two anti-serially connected Cu-SiO_2 memristive elements, is presented. The resulting CRS cells are initialized by a simple procedure and show high uniformity of resistance states afterwards. Furthermore, the CRS cells show high switching speeds below 50 ns, making them excellent building blocks for next generation non volatile memory based on passive nanocrossbar arrays.