首页> 外文会议>NATO Advanced Research Workshop on Atomistic Aspects of Epitaxial Growth Jun 25-30, 2001 Dassia, Corfu, Greece >AB-INITIO STUDY OF THE INFLUENCE OF EPITAXIAL STRAIN ON MAGNETOELASTIC PROPERTIES
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AB-INITIO STUDY OF THE INFLUENCE OF EPITAXIAL STRAIN ON MAGNETOELASTIC PROPERTIES

机译:从头开始研究表观应变对磁弹性能的影响

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摘要

Epitaxial magnetic films are interesting from the technological point of view because they represent a basis for magnetorecording devices, magnetic sensors and magnetoresistive random access memories. The physical properties of the magnetic films differ quite significantly from the properties of the respective bulk materials. For films with thickness larger than say 10 nm, the reason for these differences is mainly ascribed to the epitaxial strain due to the mismatch between the film and substrate lattice parameters. We interpret the experimental data by applying the general phenomenological nonlinear theory of magnetoelasticity and prove our hypothesis by calculating first- and second-order magnetoelastic coupling coefficients within the framework of the ab initio density functional theory.
机译:从技术的角度来看,外延磁性膜很有趣,因为它们代表了磁记录设备,磁传感器和磁阻随机存取存储器的基础。磁性膜的物理特性与各个块状材料的特性有很大的不同。对于厚度大于例如10 nm的薄膜,这些差异的原因主要归因于薄膜和基板晶格参数之间的不匹配所造成的外延应变。我们通过应用一般的磁弹性现象学非线性理论来解释实验数据,并通过在从头算密度函数理论的框架内计算一阶和二阶磁弹性耦合系数来证明我们的假设。

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