首页> 外文会议>Nanotechnology Materials and Devices Conference, 2006 IEEE >Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed
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Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed

机译:没有模板或种子的化学气相沉积法生长的独立式铜纳米线的透射电子显微镜分析

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Copper nanowires (CuNWs) were grown by chemical vapor deposition using Cu(etac)[P(OEt)3|2 as the precursor. The structure of the CuNWs was a five-fold twinned crystal with a pentagonal-pyramid edge tip. The length of the CuNWs was around 5-10 mum and the
机译:使用Cu(etac)[P(OEt)3 | 2作为前驱体,通过化学气相沉积法生长了铜纳米线(CuNWs)。 CuNW的结构是具有五边形金字塔边缘尖端的五重孪晶。 CuNW的长度约为5-10微米,

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