首页> 外文会议>Nanotechnology Materials and Devices Conference, 2006 IEEE >Optical and electrical properties of high and low resistive CuInSe2 films: a potential photoactive channel for chalcogen photo thin film transistor
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Optical and electrical properties of high and low resistive CuInSe2 films: a potential photoactive channel for chalcogen photo thin film transistor

机译:高阻和低阻CuInSe2薄膜的光学和电学性质:硫属光电薄膜晶体管的潜在光敏通道

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摘要

Chalcogen photo thin film transistor has been proposed. Using chalcogen alloys, to form a photoactive channel layer, high and low resistive CuInSe2 films are grown by thermal annealing and a three step process, respectively. Optical and electrical properties of the fabricated CuInSe2 films are investigated.
机译:已经提出了硫属元素光薄膜晶体管。使用硫属元合金,形成光活性通道层,通过热退火和三步过程生长高和低电阻CuinSe2膜。研究了制造的CuinSe2膜的光学和电性能。

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