首页> 外文会议>Nanotechnology 2009 : Technical proceedings >Highly Selective Sensing of DMMP and NH_3 Using CNTFET Based Gas Sensors Obtained using Spray-gun Technique and Fabricated with Different Metals As Electrodes
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Highly Selective Sensing of DMMP and NH_3 Using CNTFET Based Gas Sensors Obtained using Spray-gun Technique and Fabricated with Different Metals As Electrodes

机译:使用基于CNTFET的气体传感器通过喷枪技术获得的DMMP和NH_3的高度选择性感测,并使用不同金属作为电极制造

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This paper deals with the fabrication of CNTFET obtained using carbon nanotube networks and with the utilization of these last as gas sensors. The method for depositing uniform and highly controlled density CNT mats is spray-gun technique. Using this technique we have demonstrated that we can achieve CNTFET with I_(on)/I_(Off) reproducible ratios of around 10~5/10~6. These transistors have been subsequently exposed to Acetic Anhydride which is a heroin precursor, showing a very short response time and a recovery time, without heating, of around 30 minutes. In this paper are also shown preliminary results after exposure of CNTFET to subppm concentrations of DMMP and NH, using two different metals as electrodes. In this case devices were obtained using drop-casting technique.
机译:本文涉及使用碳纳米管网络获得的CNTFET的制造,以及将它们作为气体传感器的应用。沉积均匀且高度受控密度的CNT垫的方法是喷枪技术。使用这种技术,我们已经证明我们可以实现具有约10〜5/10〜6的I_(on)/ I_(Off)可再现比率的CNTFET。这些晶体管随后已暴露于乙醛海洛因前体乙酸酐中,显示出非常短的响应时间和约30分钟的无加热恢复时间。本文还显示了使用两种不同的金属作为电极将CNTFET暴露于亚ppm浓度的DMMP和NH后的初步结果。在这种情况下,设备是使用压铸技术获得的。

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