Institute of Electrical Engineering, SAS, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic;
Institute of Electrical Engineering, SAS, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic;
Institute of Electrical Engineering, SAS, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic;
Institute of Electrical Engineering, SAS, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic;
Institute of Electrical Engineering, SAS, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic;
Institute of Electrical Engineering, SAS, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic,Joint Institute for Nuclear Research, Dubna, Moscow Region, Russia;
Joint Institute for Nuclear Research, Dubna, Moscow Region, Russia;
Institute of Electrical Engineering, SAS, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic;
Transition metal dichalcogenides (TMD); sulfurization; Mo films; c-plane sapphire; silicon; magnetron sputtering; Raman spectroscopy; RBS;
机译:前体薄膜质量对C-蓝宝石MOO_3硫化的大面积MOS_2薄膜结构特性的影响
机译:通过堆叠堆叠前体薄膜通过SILAR方法制备的Cu2ZnSnS4(CZTS)薄膜的太阳能电池性能得到改善
机译:等离子体条件对低温下MOO_2形成MOO_3薄膜硫化的影响
机译:MOS_2通过硫化制备的薄膜
机译:等离子体增强了硅-硫和磷-硫系统中薄膜和新结晶模型化合物的化学气相沉积。
机译:不同前体反应能量制备的PEAL-IN2O3薄膜的性质及机制
机译:封装硫化法制备的SnS薄膜
机译:Cu(In,Ga)s2,CuGa-In前驱体H2s硫化制备薄膜太阳能电池