Abstract: We have investigated the use of radio-frequency (rf) current and voltage measurements to monitor the electrical characteristics of rf plasmas and to predict changes in ion kinetic energy distributions. These studies were performed at 2.7 and 13.3 Pa (20 and 100 mTorr) in a Gaseous Electronics Conference RF Reference Cell in mixtures of argon with oxygen, nitrogen and water. It is expected that the measurement techniques described here could be extended to monitor the sheath above a wafer during plasma etching to obtain information about changes in the condition of the wafer surface and the energies of ions bombarding it.!28
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