Magnetically enhanced reactive ion etching of silylated resist in O2/Ar mixtures

摘要

Abstract: This study describes the etching behavior of the silylated resist in a magnetically enhanced reactive ion etcher under the pressure ranges from 3 to 10 mTorr. In a pure oxygen plasma, the resist undercut beneath the silylated mask layer and isotropic resist profile were generated independent of etch conditions. Compared to the tri-level-resist process, the resist undercut tended to be reduced in the top imaging process by silylation. It was found that the addition of Ar to an O$-2$/-plasma was effective to reduce the resist undercut due to the consumption of the silylated mask layer. However, in an Ar-rich plasma, the resist profiles appeared to be positively sloped by the excessive consumption of the silylated resist.!6