首页> 外文会议>Micro/Nanoscale Heat Transfer International Conference 2008 >THERMAL PROPERTIES OF THIN METALLIC LAYER DEPOSITED ONINSULATORS: EFFECT OF THE INTERFACE ON THE INDEPENDENT DETERMINATION OF THE THERMAL DIFFUSIVITY AND CONDUCTIVITY OF THE LAYER
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THERMAL PROPERTIES OF THIN METALLIC LAYER DEPOSITED ONINSULATORS: EFFECT OF THE INTERFACE ON THE INDEPENDENT DETERMINATION OF THE THERMAL DIFFUSIVITY AND CONDUCTIVITY OF THE LAYER

机译:绝缘子上沉积的薄金属层的热性能:界面对独立确定层的热扩散率和电导率的影响

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Lateral heat diffusion thermoreflectance is a very powerful tool for determining directly the thermal diffusivity of layered structures. To do that, experimental data are fitted with the help of a heat diffusion model in which the ratio between the thermal conductivity k and the thermal diffusivity D of each layer is fixed, and the thermal properties of the substrate are known. We have shown in a previous work that it is possible to determine independently the thermal diffusivity and the thermal conductivity of a metallic layer deposited on an insulator, by taking into consideration all the data obtained at different modulation frequencies. Moreover, it is well known that to prevent a lack of adhesion of a gold film deposited on substrates like silica, an intermediate very thin (Cr or Ti) layer is deposited to assure a good thermal contact. We extend our previous work: the asymptotic behaviour determination of the surface temperature wave at large distances from the modulated point heat source for one layer deposited on the substrate to the two layers model. In this case (very thin adhesion coating whose thermal properties and thickness are known), it can be establish that the thermal diffusivity and the thermal conductivity of the top layer can still be determined independently. It is interesting to underline that the calculus can also be extended to the case of a thermal contact resistance which has often to be taken into account between two solids. We call thermal resistance a very thin layer exhibiting a very low thermal conductivity. In this case, the three parameters we have to determine are the thermal conductivity and the thermal diffusivity of the layer and the thermal resistance. We will show that, in this case, the thermal conductivity of the layer is always obtained independently of a bound of the couple thermal resistance - thermal diffusivity, the thermal diffusivity being under bounded and the thermal resistance lower bounded. Experimental results on thin gold layers deposited on silica with and without adhesion layers are presented to illustrate the method. Discussions on the accuracy will also be presented.
机译:横向热扩散热反射率是直接确定层状结构的热扩散率的非常强大的工具。为此,借助热扩散模型拟合实验数据,在该模型中,每层的热导率k和热扩散率D之比是固定的,并且已知基板的热性能。我们在先前的工作中已经表明,通过考虑在不同调制频率下获得的所有数据,可以独立确定沉积在绝缘体上的金属层的热扩散率和热导率。而且,众所周知,为了防止沉积在诸如二氧化硅之类的基底上的金膜缺乏粘附性,沉积了非常薄的中间(Cr或Ti)层以确保良好的热接触。我们扩展了我们以前的工作:在距离调制点热源较远的位置上对沉积在基板上的一层到两层模型的表面温度波的渐近行为确定。在这种情况下(非常薄的粘合涂层,其热性能和厚度是已知的),可以确定仍然可以独立确定顶层的热扩散率和导热率。有趣的是,微积分还可以扩展到热接触电阻的情况,在两个固体之间通常必须考虑这一点。我们称热阻为非常薄的层,表现出非常低的热导率。在这种情况下,我们必须确定的三个参数是层的热导率,热扩散率和热阻。我们将显示,在这种情况下,始终独立于耦合热阻的边界获得层的热导率-热扩散率,热扩散率处于下界,而热阻处于下界。给出了在有和没有粘附层的情况下沉积在二氧化硅上的薄金层的实验结果,以说明该方法。还将讨论准确性。

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