A record high 150 GHz f/sub max/ realized at 0.18 /spl mu/m gate length in an industrial RF-CMOS technology

摘要

We demonstrate that by careful layout optimisation, particularly aimed at reducing the effective gate resistance, a record high maximum oscillation frequency f/sub max/ of 150 GHz can be obtained for an industrial 0.18 /spl mu/m CMOS process showing a cut-off frequency f/sub T/ of 70 GHz. A very low minimum noise figure and good suppression of the substrate noise using a guard-ring is also shown.