Machine Learning-Based Automatic Generation of eFuse Configuration in NAND Flash Chip

摘要

Post fabrication process is becoming more and more important as memory technology becomes complex, in the bid to satisfy target performance and yield across diverse business domains, such as servers, PCs, automotive, mobiles, and embedded devices, etc. Electronic fuse adjustment (eFuse optimization and trimming) is a traditional method used in the post fabrication processing of memory chips. Engineers adjust eFuse to compensate for wafer inter-chip variations or guarantee the operating characteristics, such as reliability, latency, power consumption, and I/O bandwidth. These require highly skilled expert engineers and yet take significant time. This paper proposes a novel machine learning-based method of automatic eFuse configuration to meet the target NAND flash operating characteristics. The proposed techniques can maximally reduce the expert engineer's workload. The techniques consist of two steps: initial eFuse generation and eFuse optimization. In the first step, we apply the variational autoencoder (VAE) method to generate an initial eFuse configuration that will probably satisfy the target characteristics. In the second step, we apply the genetic algorithm (GA), which attempts to improve the initial eFuse configuration and finally achieve the target operating characteristics. We evaluate the proposed techniques with Samsung 64-Stacked vertical NAND (VNAND) in mass production. The automatic eFuse configuration takes only two days to complete the implementation.