Characterization of a low-power CMOS operational amplifier from 12.5K to 273K for low temperature experiments

摘要

In this work, we present the design and first characterization of an operational amplifier for use at cryogenic temperatures. We show the functionality of the amplifier in a range of temperatures from 12.5K to 273K. Drain current to gate voltage curves of n-channel and p-channel MOS transistors, resistors and the amplifier response were measured. The circuit allows the amplification of signals up to 100kHz with a power consumption of 48μW.