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Measurements of Field Strength on Resonator Boundaries by Perturbation of Radiation Field

机译:通过辐射场的扰动测量谐振器边界上的场强

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摘要

A new indirect method for measuring the absolute field strength at the boundaries of microwave resonators has been developed. The difference between the new method and the other indirect methods (originally developed by Hansen and Slater), is that while all the other methods are based on the perturbation of the mode-field in the resonator, the new method is based on the perturbation of the radiation-field.
机译:已经开发出一种新的间接方法,用于测量微波谐振器边界处的绝对场强。新方法与其他间接方法(最初由Hansen和Slater开发)之间的区别在于,尽管所有其他方法都是基于谐振器中模场的扰动,但新方法是基于谐振器的扰动。辐射场。

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