Modeling of GaAs Multiplier Schottky Diode in Terahertz Band

摘要

Modeling of terahertz multiplier GaAs Schottky diodes was realized by divided into nonlinear part and linear parasitic part. The nonlinear SPICE parameters of Schottky diode was obtained by the DC measurement. The linear parasitic of GaAs Schottky diode was extracted by simulation in the electromagnetic field software of HFSS. The circuit model of diodes was realized in the circuit software of ADS. The non-linear junction part of the diode was modified to take into account the self-heating effect during actual operation. A frequency multiplier operating at 170 GHz was designed and implemented based on the mode. The measured and simulated frequency multiplier efficiency trends are in good agreement.