Numerical studies of effective masses and optical gain in InGaAsN quantum-well structures with self-consistent effects

摘要

We present results of the analysis of effective masses and optical gain on InGaAsN based quantum-well structures. In our work we have considered self-consistent effects which are determined by a simultaneous solution of the Luttinger-Kohn equations for electron and hole wavefunctions and the Poisson equation for heterostructure potential modification. We describe systematic numerical results for a large range of material and structural parameters. Our results show that significant variation in the value of effective masses and optical gain is possible by adjusting the relevant parameters. We also indicate the effects due to self-consistency.