First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09pGAAFETs with High $mathbf{I_{ON}}$ of $mathbf{19.3}mu mathbf{A} mathbf{at} mathbf{V_{OV}}=mathbf{V}_{mathbf{DS}}=mathbf{-0.5V},

摘要

The natural etching stop on {111} facets yields the small dangling bond density and roughness, enabling low SS and high ION on {111} sidewalls of the GAA channels. In addition, the ~ 2% uniaxial compressive strain and [Sn]=9% in the channel can reduce the hole effective mass. As a result, 50% improvement of I_ON = 120μA/μm (perimeter), and 71% improvement of G_m=312μS/μm are achieved than our previous 3 stacked GeSn {001} nanosheets. Record high I_ON of 19.3μA per stack at V_OV=V_DS=-0.5V and record G_m of 50.2μS per stack at V_DS=-0.5V among all GeSn FinFETs and GAAFETs are achieved. The SS_lin as low as S4mV/dec is also obtained, 22% reduction than our previous work.