首页> 外文会议>International Meeting for Future of Electron Devices >Control of crystalline orientation and diameter of Si nanowires based on VLS method and electrodeposition of catalyst using AAO template
【24h】

Control of crystalline orientation and diameter of Si nanowires based on VLS method and electrodeposition of catalyst using AAO template

机译:基于VLS法和催化剂的电沉积使用AaO模板控制Si纳米线的晶体取向和直径

获取原文

摘要

Control of epitaxial crystal growth orientation and diameter of Si nanowires were accomplished using anodic aluminum oxide (AAO) template formed on Si substrates. Vapor-Liquid-Solid (VLS) growth of Si nanowires was initiated on the size-controlled Au catalyst electrodeposited in AAO, and growth direction of nanowire was determined by choosing orientation of Si substrate.
机译:使用在Si衬底上形成的阳极氧化铝(AaO)模板完成了Si纳米线的外延晶体生长型和直径的控制。 在AAO中电沉积的尺寸控制的Au催化剂中引发了Si纳米线的蒸汽 - 液体固体(VLS)生长,并通过选择Si衬底的取向来测定纳米线的生长方向。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号