capacitive sensors; gas sensors; hydrogen; lead; leakage currents; silicon compounds; titanium compounds; H; Pd-TiOlt; subgt; 2lt; /subgt; -SiOlt; subgt; 2lt; /subgt; -SiC; capacitor structure; dielectric layer; hydrogen environment; hydrogen sensing; leakage current; silicon carbide; silicon dioxide; single barrier height; titanium dioxide layer; trap assisted conduction current; trap assisted tunneling; trap density;
机译:退火温度对TiO2掺杂HfO2栅介电基MOS电容器电荷俘获和电流传导机制的调节
机译:正偏压温度应力下n-4H-SiC MOS电容器的漏电流传导,空穴注入和时间相关的介电击穿
机译:在低温下通过局部深能级瞬态光谱法可视化导带附近SiO_2 / SiC界面处的陷阱
机译:高温下Pd / TiO2 / SiC电容器中陷阱辅助传导电流进行氢感测的初步观察
机译:金属氧化物半导体电容器中电子束感应电流的俘获电荷界面调制。
机译:3C-SiC / Si上Ni辅助低温形成外延石墨烯的原位SR-XPS观察
机译:新型pt / HfTiO2 / siC肖特基二极管氢传感器的传感特性改善