Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks

摘要

The uniformity and reproducibility of the CdTe QD arrays on the GaAs substrates can be improved by using a nanoporous mask. The CdTe QDs on the GaAs substrate were grown by a molecular beam epitaxy (MBE) method. The nanoporous alumina masks used for the fabrication of QD arrays have the thickness from 0.3 um to 5 urn with the nanochannels of ~ 80 nra diameter and the pore density of ~ 10 cm". When the thickness of the alumina mask used for the CdTe QD growth was about 300 nm, the CdTe QD arrays formed as a replica of the nanochannels of the mask. Smaller self-assembled CdTe QDs located randomly were produced by using the thicker nanochannel mask than 0.5 um. The thickness of the nanochannel mask controls the size of the CdTe/GaAs QDs.