Transparency of Zinc Oxide thin-film transistors in the visible light and its application to a signal readout circuit of stacked image sensor

摘要

Transparency of ZnO TFTs under visible light irradiation was investigated. The effect of light irradiation at a source region is more serious than that at a drain side. A light-shield at a source region significant suppressed the photo leakage current under visible light irradiation regardless of a drain voltage. A 128×96 pixels color image sensor with vertically stacked blue (B), green (G), and red (R) sensitive organic photoconductive films with ZnO TFT array for a signal readout circuit has been demonstrated. The color moving image was successfully obtained without color separation system such as a color filter.