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Giant Magnetoresistive Sensors for Industrial Applications

机译:用于工业应用的巨型磁阻传感器

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Giant magnetoresistance (GMR) is the extraordinarily large change in resistance in ultra-thin magnetic multilayer films under an applied magnetic field. Its origin is spin dependent scattering in these films with layer thicknesses of only a few nanometers. Besides fundamental interest in spin dependent transport properties, the focus on these materials results from a variety of attractive applications. Here, we describe a GMR sensor concept which is tailor-made for the con-tactless measurement of angles and positions and we show the accompanied gain in performance compared to conventional Hall or Permalloy sensors. The basic scheme of this sensor is a so called spin-valve set-up. Two adjacent magnetic layers are designed such that one is magnetically hard while the other is soft. The soft magnetic layer changes the direction of its magnetisation under an applied external field with respect to the fixed magnetisation of the hard subsystem, which consists of an artificial antiferromagnet (AAF). The sensor signal, i.e. the change in resistance △R/R varies as the cosine of the angle a between the magnetisation directions in both magnetic layers.
机译:巨型磁阻(GMR)是施加磁场下超薄磁性多层薄膜的抗性的极大变化。其原点是在这些薄膜中旋转彼此散射,其层厚度仅为几纳米。除了对自旋依赖的运输特性的根本兴趣外,对这些材料的重点是来自各种有吸引力的应用。在这里,我们描述了GMR传感器概念,该概念是针对角度和位置的无触觉测量而定制的,并且与传统的霍尔或渗透组传感器相比,我们展示了性能的伴随增益。该传感器的基本方案是所谓的自旋阀设置。设计了两个相邻的磁性层,使得一个磁力致力,而另一个是柔软的。软磁层在应用的外部场下改变其磁化的方向,相对于硬质子系统的固定磁化,该磁化由人工反霉素(AAF)组成。传感器信号,即电阻△r/ r的变化在两个磁层中的磁化方向之间的角度a的余弦变化。

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