Spin-Valve Effect in Py/MoSe_2/Co Junctions

摘要

As one of the basic devices of spintronics, spin valve contains abundant physical effects in addition to its high magnetoresistance ratio (MR) value. Owing to the spin filter effect in two dimensional (2D) materials especially transition metal dichalcogenides (TMDs), the spin polarized current from ferromagnetic electrodes (FEs) passing through the 2D materials makes high- and low-resistance states in FE/2D/FE vertical junctions according to magnetization alignment of FEs. In this work, we fabricate vertical spin valve junctions utilizing exfoliated thin layer of molybdenum diselenide (MoSe_2) with the help of ultra-clean transfer technique. The current-voltage (Ⅰ-Ⅴ) performances exhibit an ohmic contact between the MoSe_2 and Fes. The MoSe_2 which act as the interlayer shows metallic behavior. We found a magnetoresistance ratio varies from 1.1% at 4K to 0.3% at 300K and independent of bias current. Combined with the reported resistive-switching (RS) performance of similar structure in the MoSe_2 based memory device, our result is prospective to be conducive for future spintronic applications.