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Evaluation of a Medium-Voltage Grid-Tied Cascaded H-Bridge for Energy Storage Systems Using SiC Switching Devices

机译:使用SIC开关装置评估用于储能系统的中电网捆扎级联H桥

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This paper presents the study and evaluation of a medium-voltage grid-tied cascaded H-bridge (CHB) three-phase inverter for battery energy storage systems using SiC devices as an enabling technology. The high breakdown voltage capability of SiC devices provide the advantage to significantly minimize the complexity of the CHB multilevel converter, with less power loss compared to when Silicon (Si) devices are used. The topology in this study has been selected based on high voltage SiC devices. In order to reach 13.8 kV, a nine-level CHB is needed when using 6.5 kV SiC MOSFETs. However, if 10 kV SiC MOSFETs are used, only five-levels of the CHB are required. The controls were developed, simulated and verified through an experimental prototype. The results from the scaled-down prototype proved the controls and the verification of the performance of five-level CHB three-phase inverter. For the system reliability, both open-loop and short-circuit faults are analyzed.
机译:本文介绍了使用SIC器件作为启用技术的电池能量存储系统的中电网级级联H桥(CHB)三相逆变器的研究和评估。 SIC器件的高击穿电压能力提供了优点,以显着地最小化CHB多级转换器的复杂性,与使用硅(Si)器件时的功率较少。本研究中的拓扑基于高压SIC器件选择。为了达到13.8 kV,使用6.5 kV SiC MOSFET时需要九级CHB。但是,如果使用了10 kV SiC MOSFET,则仅需要五级CHB。通过实验原型开发,模拟和验证对照。缩小原型的结果证明了对控制和五级CHB三相逆变器性能的验证。为了系统可靠性,分析了开环和短路故障。

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