首页> 外文会议>Workshop on Synthesis and Characterization of Inorganic Powders >Porous Silicon Nitride Prepared by Cold Isostatic Pressure
【24h】

Porous Silicon Nitride Prepared by Cold Isostatic Pressure

机译:通过冷异静压制备多孔氮化物

获取原文

摘要

Porous silicon nitride with pore forming agent of starch were prepared by cold isostatic pressing, forming problem of complex shapes were solved by methods of carbonization of starch and decreasing forming pressure. Products of porous silicon nitride had the performance parameter with density 1.5g/cm~3, porosity over 55%, bending strength over 100 MPa.
机译:通过冷等静压制备具有淀粉的孔隙成形剂的多孔氮化硅,通过淀粉的碳化方法和成形压力降低,形成复杂形状的形成问题。多孔氮化硅产品具有密度1.5g / cm〜3的性能参数,孔隙率超过55%,弯曲强度超过100MPa。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号