Plasmonic Hot Carrier Detection via SrTiO_3 Interfacial Layer

摘要

Energetic hot carrier injection from metal plasmonic structure to adjacent semiconductor lies at thecenter of the application of non-radiative decays, photochemical reactions and energy harvesting.Plasmonic hot-electron devices, till now, have been highly focused on a Schottky barrier structures toseparate the energetic carriers before the thermalization. For instance, much efforts were putted inexploring high absorption structure with enough thin metal; enough thin compared to mean free path.However, interfacial engineering of the device; exploring a new device structure, have not been fullyinvestigated.