Implementing trigonometric nonlinearity in linear ion-drift memristor model

摘要

After the fourth passive circuit element(Memristor) came to existence in 2008 its tremendous potential to be used as a replacement for MOSFETS made its mathematical modeling very imperative. Already proposed memristor models with linear ion drift needed a window function that accounted for the non linearity of charge carriers as well as limiting the state variable within device bounds. But the linear ion drift models failed to exhibit sufficient non linearity of the charge carriers. In this paper the memristive device has been characterized using a proposed window with linear ion drift model which accounts for greater non linearity than the existing windows with results(device characteristics) comparable to the non linear models.