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Microstructure and magnetic properties of FePt-MgO granular thin films fabricated by Co-sputtering method on the single crystal MgO substrate

机译:单晶MgO基板上的共溅射法制造的备用MgO颗粒薄膜的微观结构和磁性

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L1-FePt film has the high magnetocystalline anisotropy energy (K), large coercivity (H) and it is an ideal high density magnetic recording material. However, L1-FePt ordered phase is obtained by high temperature annealing, which is prone to increase the grain size of FePt. The large size grains cause the surface roughness increase, which is the source of the noise during the recording process. MgO is chosen for its widely application in the tunnel junction devices and it has a suitable lattice mismatch with FePt (4%) [1]. The FePt granular thin film with co-deposited MgO non-magnetic matrix is beneficial to suppress the FePt grain growth during annealing and decrease the exchange coupling effects between the FePt grains [2]. The utilization of MgO single crystal substrate induces the deposition of MgO matrix because of the homogeneous structure, which has the advantages of the formation of the inter-granular phase between FePt grains. In this paper, the FePt-MgO films were prepared by co-sputtering on the single crystal <;100> MgO substrate in magnetron sputtering system. The microstructure and magnetic properties are investigated. The targets are FePt and ceramic MgO. The deposition temperature was varied from room temperature to 300. The As-deposited FePt-MgO films were annealed at 800 for 1hour. The composition of FePt and MgO was configured by the power of the targets (both RF and DC power). All the films were characterized by XRD, AFM/MFM, and VSM.
机译:L1-repep膜具有高磁囊性各向异性能量(K),大矫顽力(H),是理想的高密度磁记录材料。然而,通过高温退火获得L1-FEPT有序相,其易于增加备态的晶粒尺寸。大尺寸的晶粒会导致表面粗糙度增加,这是记录过程中噪声的源。选择MgO在隧道结装置中广泛应用,它具有备态(4%)[1]的合适的晶格错配。具有共沉积的MgO非磁性基质的缩放颗粒薄膜有利于抑制退火期间的捕获晶粒生长,并降低缩小晶粒之间的交换耦合效应[2]。由于均匀的结构,MgO单晶基板的利用诱导MgO矩阵的沉积,这具有形成颗粒之间的颗粒间相位的优点。在本文中,通过在磁控溅射系统中的单晶<; 100> MgO衬底上溅射来制备Fept-MgO膜。研究了微观结构和磁性。目标是扫描和陶瓷MgO。沉积温度从室温变化至300.在800℃下退火沉积的FEST-MgO膜1小时。通过目标的功率(RF和DC功率)构成备态和MgO的组成。所有薄膜的特征在于XRD,AFM / MFM和VSM。

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