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Growth of Rutile TiO_2 Nanorods by Chemical Bath Deposition Method on Silicon Substrate at Different Annealing Temperature

机译:不同退火温度下硅衬底的化学浴沉积法通过化学浴沉积法生长金红石TiO_2纳米棒

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Effects of annealing treatment on growth of rutile TiO_2 nanorods on structural, morphological and optical properties of TiO_2 nanorods were investigated. The nanorods were fabricated on p-type (111)-oriented silicon substrates and, all substrates were seeded with a TiO_2 seed layer synthesized by radio-frequency reactive magnetron sputtering system. Chemical bath deposition (CBD) was carried out to grow rutile TiO_2 nanorods on Si substrate at different annealing temperatures (350, 550, 750, and 950°C). Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analyses showed the tetragonal rutile structure of the synthesized TiO_2 nanorods. Optical properties were examined by photoluminescence spectroscopy. The spectra exhibit one strong UV emission peak which can be seen at around 390 nm for all of the samples. In the visible region, TiO_2 demonstrated two dominant PL emissions centered at around 519 and 705 nm. The experimental results showed that the TiO_2 nanorods annealed at 550°C exhibited the optimal structural properties. Moreover, the CBD method enabled the formation of photosensitive, high-quality rutile TiO_2 nanorods with few defects for future optoelectronic nanodevice applications.
机译:研究了退火处理对金红石TiO_2纳米杆生长对TiO_2纳米棒结构,形态学和光学性质的影响。纳米棒在p型(111)型硅基衬底上制造,并且通过射频反应磁控溅射系统合成的TiO_2种子层接种所有基材。在不同的退火温度(350,550,750和950℃)下,进行化学浴沉积(CBD)以在Si衬底上生长润孔TiO_2纳米棒。拉曼光谱,X射线衍射(XRD)和场发射扫描电子显微镜(FeSEM)分析显示了合成的TiO_2纳米棒的四边形金红石结构。通过光致发光光谱检查光学性质。光谱表现出一种强紫外线发射峰,其可以在约390nm上看到所有样品。在可见区域中,TiO_2展示了在519和705nm左右的两个主导PL排放。实验结果表明,在550℃下退火的TiO_2纳米棒表现出最佳的结构性。此外,CBD方法使得光敏,高质量的金红石TiO_2纳米棒具有很少的缺陷,用于未来的光电纳米纳米专用应用。

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