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Crystalline Silicon Solar Cell Efficiency Improvement by Advanced Cleaning Technology

机译:通过先进的清洁技术进行晶体硅太阳能电池效率提高

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Sunsonix has identified technology gap/need in the area of crystalline silicon photovoltaic efficiency and field degradation. The cause of both poor efficiency and rapid degradation may share common roots. Trace contamination at the photovoltaic junctions lead to both mid-level traps and photonic defects. In other words, very small amounts of contamination can result in poor photovoltaic efficiency as well as susceptibility to further efficiency decay when exposed to sunlight after field installation. In recent trials we have conducted best of class cleans that increase the implied open circuit voltage by 3%. In manufacturing split lot trials for both batch and in-line wet cleaning tools a post texturing etch resulted in a cell efficiency increase of 0.3% absolute on multi-crystalline Si wafers.
机译:Sunsonix已经确定了在晶体硅光伏效率和场降解领域的技术间隙/需要。效率差和快速降解的原因可能分享常见的根源。在光伏连接点进行痕迹导致中级陷阱和光子缺陷。换句话说,非常少量的污染可能导致光伏效率差以及在现场安装后暴露于阳光时进一步效率衰减的易感性。在最近的试验中,我们首先进行了课堂清洁,将隐含的开路电压增加3%。在制造批次和在线湿式清洁工具的分裂批次试验中,纹理蚀刻后蚀刻导致电池效率增加0.3%在多晶硅晶片上。

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