Sub-THz source integrated in industrial silicon Photonic technology targeting high data rate wireless applications

摘要

Leveraging the performances offered by advanced CMOS processes, silicon technologies enable today the development of cost effective millimeter-wave (mmW) applications (60 GHz wireless link is a good example). In order to achieve higher data rates (> 10 Gb/s), we can now think about moving to sub-THz frequencies in order to take advantage of wider frequency bands. In this context, the development of Si based sub-THz sources will be a key enabler. In this paper, using a beat-note of two lasers, we evaluate the performance of an industrial Si Photonics PIN Photo Diode as a sub-THz source. An output power of ～ ?28 dBm is obtained at 200 GHz.