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Dual-band uncooled infrared sensors employing Fano resonance in plasmonic absorbers

机译:采用扇形吸收器的双频带加工红外线传感器采用FANO共振

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Wavelength-selective uncooled infrared (IR) sensors have significant advantages with regard to applications such as fire detection, gas analysis, hazardous materials recognition, and biological analysis. We have previously demonstrated an uncooled IR sensor based on a two-dimensional plasmonic absorber (2D PLA) that exhibited wavelength-selective absorption over a wide range spanning the middle and long-wavelength IR regions. This device had a Au-based 2D periodic dimple-array structure, in which surface plasmon modes were induced, leading to wavelength-selective absorption, such that the absorption wavelength was determined by the period of the surface dimples. However, dual-band operation based on this concept has not yet been investigated, even though the ability to absorb in two different wavelength bands is extremely important for object recognition. In the present study, a dual-band uncooled IR sensor was developed using a 2D PLA with asymmetric dimple periods (2-D PLA-AP). To achieve multiband absorption, the Au-based dimples in this device were fabricated so as to have different periods in the orthogonal x and y directions. Theoretical calculations predicted asymmetric absorption spectra, attributed to Fano resonance in the 2-D PLA-AP. A sensor was subsequently fabricated using complementary metal oxide semiconductor and micromachining techniques. Measurement of the spectral responsivity demonstrated that selective absorption occurred in two different wavelength bands, determined by the dimple periods in the x and y directions. The results obtained in this study will be applicable to the development of advanced sensors capable of multiband detection in the IR region.
机译:波长选择性加工红外线(IR)传感器关于火灾检测,气体分析,危险物质识别和生物分析等应用具有显着的优势。我们之前已经证明了一种基于二维等离子体吸收器(2D PLA)的加工IR传感器,其在跨越中间和长波长IR区域的宽范围内表现出波长选择性的吸收。该装置具有基于AU的2D周期性凹坑阵列结构,其中诱导了表面等离子体模式,导致波长选择性吸收,使得吸收波长由表面凹坑的周期确定。然而,即使在两个不同波长带中吸收的能力对于对象识别非常重要,尚未研究基于该概念的双频操作。在本研究中,使用具有不对称凹坑时段(2-D PLA-AP)的2D PLA开发双频带加工IR传感器。为了实现多频带的吸收,制造该装置中的基于Au的凹坑,以便在正交x和y方向上具有不同的时段。理论计算预测不对称吸收光谱,其归因于2-D PLA-AP中的Fano共振。随后使用互补金属氧化物半导体和微机械技术制造传感器。光谱响应度的测量表明,在两个不同的波长带中发生选择性吸收,由x和y方向上的凹坑周期确定。本研究中获得的结果适用于能够在IR区域中提供多频量检测的先进传感器的开发。

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