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Exploring SSD endurance model based on write amplification and temperature

机译:基于写放大和温度的SSD耐力模型

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Write endurance of NAND Flash-based SSDs (SSD endurance for short) is essential for data reliability in storage systems. Previously, studies concentrated on different approaches to ensure SSD endurance. In this paper, we explore the SSD endurance based on write amplification and temperature. SSD endurance is determined by write endurance of NAND Flash, which depends on the limited number of P/Es in a NAND Flash. The more available P/Es a NAND Flash in an SSD has, the higher endurance an SSD characterizes. These available P/Es are influenced by write amplification and temperature. Large write amplification wears down the available number of P/Es in NAND Flash and causes data error, which degrades SSD endurance. Operating temperature influences the Fowler-Nordheim tunneling mechanism, which can cause electrons to be trapped in the tunnel insulation oxide layer of a floating gate transistor (i.e., FGT). These trapped electrons can increase the probabilities of data storage failure in a FGT. We are motivated to explore different impacts of write amplification and operating temperature on SSD endurance, and propose SSD endurance model to provide designer more useful information. By this means, new methods can be implemented to guarantee SSD endurance in storage systems.
机译:写入基于NAND的基于闪存的SSD(SSD耐久性的SSD耐久性)对于存储系统中的数据可靠性至关重要。此前,研究集中在不同的方法,以确保SSD耐力。在本文中,我们根据写入放大和温度探索SSD耐力。 SSD耐久性由NAND闪存的写入耐久性确定,这取决于NAND闪存中的有限数量的P / ES。 SSD中越多的P / ES NAND闪存,SSD的耐受性越高。这些可用的P / ES受写扩增和温度的影响。大型写入放大磨损NAND闪存中的可用数量的P / ES,并导致数据误差降低SSD耐力。操作温度影响Fowler-Nordheim隧道机构,这可能导致电子捕获在浮栅晶体管(即,FGT)的隧道绝缘层中。这些被捕获的电子可以在FGT中增加数据存储故障的概率。我们有动力探索对SSD耐力的写入放大和工作温度的不同影响,并提出SSD耐力模型,以提供设计人员更有用的信息。通过这种方式,可以实现新方法以保证存储系统的SSD耐力。

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