Atomistic Modeling and HAADF Investigations of Misfit and Threading Dislocations in GaSb/GaAs Hetero-structures for Applications in High Electron Mobility Transistors

摘要

A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.