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Comparative study of adsorption of O_2, CO_2, NO_2 and SO_2 on pristine and Si-Doped Carbon Nanotubes

机译:o_2,CO_2,NO_2和SO_2对原始和Si掺杂碳纳米管的吸附的比较研究

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Density functional theory is used to investigate the adsorption properties of O_2, CO_2, SO_2 and NO_2 gas molecules on pristine carbon nanotube (CNT) and Si-doped carbon nanotube (Si-CNT). All molecules except NO_2 are physisorbed, with essentially no charge transfer between the CNT and molecules. The electronic properties of CNT are sensitive to the adsorption of NO_2 because of its chemisorption, while they are insensitive to the O_2, CO_2 and SO_2 molecules. The weak binding of these molecules on CNT is due to formation of charge-dipole interactions. In case of Si-CNT, all molecules are chemisorbed to the Si-C bonds with appreciable adsorption energy and significant charge transfer. The density of state analysis shows that the additional state near the Fermi level due to doping of silicon is responsible for chemisorption of the molecules. Further, our theoretical results suggest that molecule-induced modification of the density of states close to the Fermi level might significantly affect the transport properties of nanotubes.
机译:密度泛函理论用于研究原始碳纳米管(CNT)和Si-CNT)上的O_2,CO_2,SO_2和NO_2气体分子的吸附性能。除NO_2之外的所有分子都是物质吸附的,基本上没有CNT和分子之间的电荷转移。 CNT的电子性质对NO_2的吸附敏感,因为其化学吸附,而它们对O_2,CO_2和SO_2分子不敏感。这些分子对CNT对CNT的弱结合是由于荷偶极相互作用的形成。在Si-CNT的情况下,所有分子都以明显的吸附能量和显着的电荷转移与Si-C键合。状态分析的密度表明,由于硅掺杂导致的费米水平附近的附加状态负责分子的化学吸附。此外,我们的理论结果表明,分子诱导的修饰靠近费米水平的状态密度可能会显着影响纳米管的运输性能。

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