PREFACE

摘要

On May 12-17, 2013, the international symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications')) will be held as a part of the 223rd Meeting of the Electrochemical Society. The venue is the City of Toronto (Ontario), the cultural, entertainment and financial capital of Canada. Since this new decade the organizers are redirecting and widening the scope of this annual and technology-driven symposium, which manifests in the new symposium title. The focus has transformed from traditional scaling in CMOS integrated circuit manufacturing (More Moore for short) into more diversification and embedded functionality (More than Moore) and end-of-CMOS and beyond-CMOS nanoelectronic devices and materials. Thus, the main objective is to address the latest advances in channel, gate stack and source/drain engineering for state-of-the-art CMOS integrated circuit manufacturing, next to advanced non-planar transistor structures and new exploratory areas such as 3D integration, MEMS & NEMS devices, which are adding functionalities to conventional CMOS devices.