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Fabrication of Cu-SiC_p Composites Via the Electroless Copper Coating Process for the Electronic Packaging Applications

机译:通过无电铜涂层工艺制造Cu-SiC_P复合材料,用于电子包装应用

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Silicon carbide reinforced copper matrix (Cu-SiC_p) composites are highly rated as thermal management materials due to their high thermal conductivity and low thermal expansion properties. However, the Cu-SiC_p composites fabricated via the conventional powder metallurgy methods have substandard properties due to the weak bonding between the copper matrix and the SiC_p reinforcement. In order to strengthen the bonding, the SiC_p were coated with copper via electroless coating process. Based on the experimental results, a continuous copper deposition on the SiC_p was obtained. The Cu-Coated layer improved the green strength of the composites thus allowed a high volume fraction of SiC_p to be incorporated into the copper matrix. However, the increase in the volume fraction of SiC_p has a significant effect on the apparent porosity of the Cu-SiC_p composites. Nevertheless, the porosity of the Cu-Coated Cu-SiC_p composites remained significantly lower than those of non-Coated Cu-SiC_p composites especially at high volume fraction of SiC_p.
机译:由于其高导热率和低热膨胀性能,碳化硅增强铜基质(Cu-SiC_P)复合材料被高度额定为热管理材料。然而,由于铜基质和SIC_P增强件之间的弱粘接,通过传统粉末冶金方法制造的Cu-SiC_P复合材料具有不良特性。为了加强粘合,通过无电镀方法涂覆SiC_P。基于实验结果,获得了SIC_P上的连续铜沉积。 Cu涂层层改善了复合材料的绿色强度,因此允许将高体积分数的SiC_P掺入铜基中。然而,SiC_P的体积分数的增加对Cu-SiC_P复合材料的表观孔隙有显着影响。然而,Cu - 涂覆的Cu-SiC_P复合材料的孔隙率明显低于非涂覆的Cu-SiC_P复合材料,特别是在SIC_P的高体积分数下。

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