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UNIFIED ANALYSIS OF SODIUM OXIDE DEPOSIT GROWTH AND SODIUM PLUGGING

机译:综合分析氧化钠沉积物生长和钠堵塞

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A new sodium plugging model, based on first principles, has been developed and is described in this work. It integrates experiment data on the rate of formation of sodium oxide deposits, obtained from the upgraded Sodium Plugging Loop (SPL) at Argonne National Laboratory, with previous literature data referred to both small and large channels. In the SPL, deposits are caused by the cooling-induced precipitation, upon the stainless steel walls, of sodium oxide from dissolved oxygen impurities. The novel feature of the model consists of modeling the sodium oxide deposits as highly porous, with most of the deposit volume occupied by sodium interstitial to sodium oxide, as revealed during previous investigations. The new first principles plugging model is shown to provide a consistent understanding of the currently existing body 'of data encompassing turbulent and laminar forced convection flow regimes as well as laminar natural convection flow of sodium, small and large sodium channel sizes, and orifice plates and lengthy sodium channels.
机译:基于第一原理的新型钠堵波模型已经开发出来,并在这项工作中描述。它将实验数据与氧化钠沉积物的形成速率集成,从argonne国家实验室的升级的钠堵漏环(SPL)中获得,以前的文献数据引用了小型和大渠道。在SPL中,沉积物由冷却引起的沉淀,从溶解的氧杂质的不锈钢壁上的氧化钠上引起。该模型的新颖特征包括将氧化钠沉积物(如高氧化钠为氧化钠占用的氧化钠沉积物,如先前的研究)所揭示的。显示新的第一个原理堵塞模型,可以提供对当前现有的数据的现有身体的堵塞模型,包括湍流和层流向对流流量的数据以及钠,小型和大钠通道尺寸和孔板的层状自然对流流程和孔板冗长的钠通道。

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