Analysis of Local Electric Conductive Property for Si Nanowire Models

摘要

Local electric conductive properties of Si nanowire models are investigated by using two local electric conductivity tensors defined in Rigged QED. It is emphasized that one of these local conductivities is defined as the response of electric current to the actual electric field at a specific point and does not have corresponding macroscopic physical quantity. For the analysis of local conductivities, it is found that there are regions which show complicated response of electric current density to electric field, in particular, opposite and rotational ones. It is also found that two local conductivity tensor shows quite different pattern. We also study the effects of impurities by using a model including a O atom, in terms of the local response to electric field.