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Improved frequency response in a SiGe npn device through improved dopant activation

机译:通过改进的掺杂剂激活改进SiGe NPN设备中的频率响应

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We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (f_(MAX)).
机译:我们使用激光退火来研究改善掺杂剂激活的影响,以改善激活,以及低温接触模块,以避免去激活。我们介绍了简单的直流测试结构测量和高频双极晶体管测量结果的结果。改进的活化显着降低了薄层电阻,特别是对于多晶硅层。同样地,双极装置电阻寄生剂的减少导致最大功率增益频率的改善(F_(最多))。

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