Toward the High-Quality Graphene for Optoelectronic Applications by Optimization of the Growth and TransferParameters

摘要

In this paper, the process parameters of graphene during fabrication and transfer are investigated.Cu is utilized as the substrate and chemical vapor deposition are used to obtain graphene. The results show that, the surface condition of the Cu substrate tends to be worse than as-received after arelatively higher temperature (1035°C)annealing and growth process, which lead to bad graphene quality.In addition, pre-treatment of Cu substrate byacetic acidis helpful to reduce the nucleation sites. Reflow processbefore PMMAetchingis an effective methodto eliminate the wrinklesformed during transfer.High-quality graphene for optoelectronic applications were obtained based on the optimized fabrication and transfer process.