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CHARACTERIZATION AND MICROSTRUCTURE EVOLUTION IN Er-DOPED BaTiO3 CERAMICS

机译:ER掺杂BATIO3陶瓷中的表征和微观结构演化

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BaTiO3-ceramics are known as some of the most useful electroceramics with a various applications. In this study the effect of Er2O3 as additive on the microstructure and dielectric properties of doped BaTiO3 was investigated. The samples doped with 0.01 to 1.0 wt% Er2O3 were prepared using by conventional solid state procedure, and were sintered at 1350°C for four hours. The microstructure of sintered specimens was investigated by SEM-5300 and capacitance and dielectric loss measurements have been done using LCR-metra Agilent 4284A in the frequency range from 20Hz to 1MHz. The microstructure study with low additive concentration shows abnormal grain size, with average grain size between 20-60 μm. With the higher dopant concentracion the abnormal grain growth is inhibited and the grain size ranged between 5-15μm. The dielectric constant decrease with increase of dopant concentration and for all of the investigated samples ranged from 650 to 1600 at room temperature. The dissipation losses a linear decrease v.s frequency is mesured for all investigated samples. We applied a fractal method for the microstructure analysis. This method for analysis of the structure of ceramics provides a new approach for describing, predicting and modeling the grain shape and relations between the BaTiO3 ceramic structure and dielectrical properties.
机译:BATIO3-陶瓷被称为一些具有各种应用的最有用的电陶瓷。在这项研究中,研究了ER2O3作为添加剂对掺杂BATIO3的微观结构和介电性能的影响。使用常规固态方法制备掺杂0.01至1.0wt%ER2O3的样品,并在1350℃下烧结4小时。通过SEM-5300研究了烧结样品的微观结构,并且使用LCR-Metra Agilent 4284a在20Hz至1MHz的频率范围内进行电容和介电损耗测量。添加剂浓度低的微观结构研究显示出异常的晶粒尺寸,平均晶粒尺寸在20-60μm之间。具有较高的掺杂剂浓度,抑制异常晶粒生长,晶粒尺寸范围在5-15μm之间。随着掺杂剂浓度的增加,介电常数随着掺杂剂浓度的增加,并且对于在室温下的所有研究范围为650至1600。耗散损耗为所有研究样本都有线性降低V.S频率。我们应用了微观结构分析的分形方法。这种用于分析陶瓷结构的方法提供了一种描述,预测和建模BATIO3陶瓷结构和电介质性质之间的晶粒形状和关系的新方法。

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