The dielectric tunability of Ba_(0.6)Sr_(0.4)TiO_3 thin films deposited by radio-frequency magnetron sputtering

摘要

Ba_(0.6)Sr_(0.4)TiO_3 (BST) thin films with the thickness of 300nm were deposited on P1/SiO_2/Si substrates at various deposition temperatures by RF magnetron sputtering technique, and their electric properties were investigated. Due to the high temperature annealing process at substrate temperature of 600 °C, well-crystallized BST film was deposited. The dielectric constant and dielectric loss of the film deposited at 600 °C are 300 and 0.033 at 100 kHz, respectively. Due to the good crystallinity of the BST films deposited by RF magnetron sputtering, high dielectric tunability up to 39.2% is achieved at a low applied voltage of 5V.