Application of substrate transfer to a 190 GHz frequency doubler and 380 GHz sub-harmomic mixer using MMIC foundry Schottky diodes

摘要

We report upon the development of a 190 GHz MMIC frequency doubler and 380 GHz sub-harmonic mixer usingfoundry planar Schottky diodes. The devices have been fabricated by the company UMS using their BES process, andpost-processed afterwards to transfer the GaAs circuit membranes onto a quartz substrate. This novel substrate transfertechnique is presented. Preliminary measurements give a doubler output power over 3 mW in the frequency range 170-205 GHz.