While binary and a several ternary (containing C) Sn- and Sbbased alloys have been examined as potential NIB anodes, little is known regarding Ge-containing systems. Here we provide the first report on thin films – based ternary Sn-Ge-Sb alloy anodes. In order to better understand the role of each element in determining the electrochemical properties of the ternary system, and to obtain baselines for clear comparisons, elemental Ge, Sb, Sn and binary Sn- Ge and Sb-Ge alloys are also evaluated. Our results demonstrate a highly promising reversible capacity and rate capability in Sn60Ge20Sb20 and Sn50Ge25Sb25 alloys. These findings should serve as a useful guide for designing improved formulations of NIB electrode materials in bulk, using methods such powder comechanical milling and rapid solidification.
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