The Research of Ways of Increase of Sensitivity of Magnetotransistor by Numerical Methods

摘要

By means of numerical modeling research of structure dual-collector bipolar magnetosensitivity n-p-n the transistor in diffusion well of p-type with topology of elements: the emitter-base-collector was carried out. The analysis of proceeding currents through electrodes of the transistor has shown that relative magnetic sensitivity has a negative range. It is carried out research of influence of control voltage between electrodes of the transistor on change of a sign and size relative current sensitivity. The factors leading increase of magnetic sensitivity of transistors and change of a sign of a target signal by numerical calculations are established.