Application of GeO_2 doped silica waveguides in optical modulator

摘要

A novel electro-optical modulator using GeO_2 doped silica waveguides based on silicon substrate is proposed. The modulator is analyzed and designed with the finite element method. The simulation results show that the designed modulator operates with a 3dB optical bandwidth of 56.6GHz, a half-wave voltage of 8.9V and a characteristic impedance of 51.8Ω at 1310nm wavelength. The presented modulator can be fabricated easily using Si-based very large-scale integrated technology and is very suitable for optoelectronic integrated circuits.