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A homogenized strain model for Ni-Mn-Ga driven with collinear field and stress

机译:基于线域和应力驱动Ni-Mn-Ga的均质应变模型

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Ferromagnetic Shape Memory Alloys (FSMAs) in the nickel manganese gallium system have been shown to exhibit large magnetically induced strains of up to 9.5% due to magnetically driven twin variant reorientation. In order for this strain to be reversible, however, an external restoring stress or magnetic field needs to be applied orthogonal to the field and hence the implementation of Ni-Mn-Ga in applications involves the use of electromagnets, which tend to be heavy, bulky and narrowband. In previous work at The Ohio State University a sample of Ni50Mn28.7Ga21.3 has been shown to exhibit reversible compressive strains of -4200 microstrain along its [001] direction when a magnetic field is applied along this same direction and no externally applied restoring force is present. This reversible strain is possible because of an internal stress field associated with pinning sites induced during manufacture of the crystal. This paper analyzes the switching between two variant orientations in the presence of magnetic fields (Zeeman energy) and pinning sites (pinning energy) through the formulation of a Gibbs energy functional for the crystal lattice. Minimization of the Gibbs free energy yields a strain kernel which represents the predicted behavior of an idealized 2-dimensional homogeneous single crystal with a single twin boundary and pinning site. While adequate, the kernel has limitations because it does not account for the following: (a) Ni-Mn-Ga consists of a large number of twin variants and boundaries, (b) the strength of the pinning sites may vary, and (c) the local and applied magnetic field will differ due to neighbor-to-neighbor interactions. These limiting factors are addressed in this paper by considering stochastic homogenization. Stochastic distributions are used on the interaction field and on the pinning site strength, yielding a phenomenological model for the bulk strain behavior of Ni50Mn28.7Ga21.3. The model quantifies both the hysteresis and saturation of the strain. Constrained optimization is used to determine the necessary parameters and an error analysis is performed to assess the accuracy of the model for various loading conditions.
机译:由于磁力驱动的双变体重新定向,已经显示镍锰镓系统中的铁磁形状记忆合金(FSMAS)表现出大的磁诱导的菌株高达9.5%。然而,为了使这种应变可逆,需要外部恢复应力或磁场垂直于该领域应用,因此在应用中的Ni-Mn-Ga的实现涉及使用电磁铁,这往往是重的,笨重和窄带。在以前的工作在俄亥俄州州立大学的工作中,当沿其磁场沿其沿其施加磁场沿其施加磁场并且没有外部施加的恢复力时,已经显示了Ni50mN28.7Ga21.3的样品。当磁场施加磁场并且没有外部施加的恢复力时,它沿其沿其[001]方向具有可逆压缩菌株-4200微纹菌株存在。由于与在晶体制造期间引起的钉扎位点相关的内应力场,这种可逆应变是可能的。本文通过制定了晶格的吉布能量功能,分析了磁场(塞曼能量)和钉扎位点(钉扎能量)的两个变体取向之间的切换。吉布斯自由能量最小化产生应变核,其表示具有单个双边界和钉扎位点的理想的二维均匀单晶的预测行为。虽然足够,内核具有限制,因为它不考虑以下内容:(a)Ni-Mn-Ga由大量的双变型和边界组成,(b)钉扎网站的强度可能会有所不同,并且(C )本地和施加的磁场由于邻居与邻居的相互作用而不同。通过考虑随机均质化,本文解决了这些限制因素。随机分布用于相互作用场和钉扎位点强度,从而产生Ni50mN28.7ga21.3的散装菌株行为的现象学模型。该模型量化了应变的滞后和饱和度。使用约束优化来确定必要的参数,并执行错误分析以评估模型的精度,用于各种负载条件。

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