Coherent plasmons in InSb

摘要

We study coherent plasmons in the narrow-gap semiconductor InSb by measuring the far-infrared electromagnetic radiation they emit. These collective oscillations are excited with ultrashort, near-infrared laser pulses having photon energy far above the semiconductor band gap. Coherent plasmon behavior is characterized as a function of temperature, doping density, optically injected carrier density, and spatial confinement.