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Two-Dimensional Capacitive Micromachined Ultrasonic Transducer (CMUT) Arrays for a Miniature Integrated Volumetric Ultrasonic Imaging System

机译:用于微型集成容积超声成像系统的二维电容微机械超声换能器(CMUT)阵列

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We have designed, fabricated, and characterized two-dimensional 16x16-element capacitive micromachined ultrasonic transducer (CMUT) arrays. The CMUT array elements have a 250-μm pitch, and when tested in immersion, have a 5-MHz center frequency and 99% fractional bandwidth. The fabrication process is based on standard silicon micromachining techniques and therefore has the advantages of high yield, low cost, and ease of integration. The transducers have a Si3N4 membrane and are fabricated on a 400-μm thick silicon substrate. A low parasitic capacitance through-wafer via connects each CMUT element to a flip-chip bond pad on the back side of the wafer. Each through-wafer via is 20 μm in diameter and 400 μm deep. The interconnects form metal-insulator-semiconductor (MIS) junctions with the surrounding high-resistivity silicon substrate to establish isolation and to reduce parasitic capacitance. Each through-wafer via has less than 0.06 pF of parasitic capacitance. We have investigated a Au-In flip-chip bonding process to connect the 2D CMUT array to a custom integrated circuit (IC) with transmit and receive electronics. To develop this process, we fabricated fanout structures on silicon, and flip-chip bonded these test dies to a flat surface coated with gold. The average series resistance per bump is about 3 Ohms, and 100% yield is obtained for a total of 30 bumps.
机译:我们设计了设计,制造和表征二维16X16元件电容微机械超声换能器(CMUT)阵列。 CMUT阵列元件具有250μm间距,并且当在浸入时进行测试,具有5MHz的中心频率和99%的分数带宽。制造工艺基于标准硅微机械技术,因此具有高产量,成本低,集成容易的优点。换能器具有Si3N4膜,并在400μm厚的硅衬底上制造。低寄生电容通过 - 晶片通过将每个CMUT元件连接到晶片背面的倒装芯片键合焊盘。每个通晶孔的直径为20μm,深度为400μm。互连与周围的高电阻率硅衬底形成金属 - 绝缘体半导体(MIS)结,以建立隔离并减少寄生电容。每个通过晶片通过寄生电容小于0.06pf。我们研究了一种AU-IN倒装芯片键合过程,将2D CMUT阵列连接到定制集成电路(IC),其具有发射和接收电子设备。为了开发这个过程,我们在硅上制造了扇出结构,并倒装芯片粘合的这些试验模具成带金的平坦表面。每个凸块的平均串联电阻约为3欧姆,获得100%的产率,总共30个凸块。

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